> ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and phase-change memory (PCM) in that they change dielectric material properties. CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. By contrast, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor.
westurner•2h ago
ReRAM, RRAM: Resistive random-access memory: https://en.wikipedia.org/wiki/Resistive_random-access_memory :
> ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and phase-change memory (PCM) in that they change dielectric material properties. CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. By contrast, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor.