Original article: https://www.nature.com/articles/s41467-026-69733-1

any hope that this could be applied to improving memory fab yields and ease some of the capacity constraints on consumer devices? asking for a friend

> At Bell Labs, Muller and fellow scientist Glen Wilk ’90, who is now vice president of technology at ASM, tried replacing silicon dioxide - the prevailing gate material, which leaked too much current at small scales – with hafnium oxide.

They are naming professors like "Now That's What I Call Music" albums now?

(I genuinely can't find why there's a '90 there, suspect it's a copy/paste error?)