How high could this technique go?
This enabled circuit operation below 3 V with an operating frequency of up to 25 kHz, which was constrained by parasitic capacitances
I would guess process improvements would help a lot towards lowering those parasitics. So I wouldn't take this initial attempt as a guide for ultimate speed.
Since this is 2D materials, a capacitor is a dielectric sandwiched by two conductors and capacitance scales linearly with area, I would assume just scaling things down would help immensely with parasitic capacitance. Changing materials or process could also change the dielectric constant which also affects the capacitance linearly.
Paper is sadly not open access, so I can't check if they mention this or have done some theoretical peak calculations or something. Would indeed be interesting to know.
> molybdenum disulfide for n-type transistors and tungsten diselenide for p-type transistors
Isn't this rather unusual?It’s confusing to me because moly d is a very common lubricant, even for home uses.
Modern microprocessor built from complementary carbon nanotube transistors https://www.nature.com/articles/s41586-019-1493-8
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